DC-40 GHz and 20-40 GHz MMIC SPDT switches
- 1 December 1987
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 34 (12) , 2595-2602
- https://doi.org/10.1109/t-ed.1987.23359
Abstract
DC to 40 GHz and 20 to 40 GHz monolithic GaAs SPDT switches have been demonstrated. Both the measured and the modeled small-signal performance are presented. Measured power handling performance and switching speed data are also presented. The 20-40 GHz switch uses a combination of shunt FET's and quarter-wave transformers. Better than 2 dB insertion loss and 25 dB isolation have been achieved. The dc-40 GHZ switch uses a combination of series and shunt FET's. Better than 3 dB insertion loss and 23 dB isolation have been achieved. A simplified switching FET model is used to adequately model switch performance. It is demonstrated that parasitic "off" state resistance is an important FET characteristic for broad-band switch design. The Switches use MESFET's With the same characteristics as an existing millimeter-wave amplifier to allow for ease of future integration.Keywords
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