GaAs FET RF switches
- 1 July 1985
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 32 (7) , 1272-1278
- https://doi.org/10.1109/t-ed.1985.22111
Abstract
The device parameter dependences of GaAs FET switch performance have been determined analytically and by two-dimension simulation. FET switch design would maximize the value of the switch quality factor while retaining the power handling capacity. Expressions for both the quality factor and power handling capacity are derived in terms of device parameters, and would enable such optimization to be performed.Keywords
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