Observations of defects in LPE GaAs revealed by new chemical etchant
- 1 September 1979
- journal article
- Published by Elsevier in Journal of Crystal Growth
- Vol. 47 (3) , 434-436
- https://doi.org/10.1016/0022-0248(79)90211-2
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Asymmetry of misfit dislocations in heteroepitaxial layers on (001) GaAs substratesJournal of Crystal Growth, 1977
- Defects in epitaxial multilayersJournal of Crystal Growth, 1976
- Nearly perfect crystal growth of III–V compounds by the temperature difference method under controlled vapour pressureJournal of Crystal Growth, 1975
- Liquid phase epitaxy of GaP by a temperature difference method under controlled vapor pressureIEEE Transactions on Electron Devices, 1975
- Selective Photoetching of Gallium ArsenideJournal of the Electrochemical Society, 1972
- Etching of Dislocations on the Low-Index Faces of GaAsJournal of Applied Physics, 1965