Spin-dependent recombination in irradiated Si/SiO2 device structures
- 4 April 1988
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 52 (14) , 1161-1163
- https://doi.org/10.1063/1.99192
Abstract
We report studies of spin‐dependent recombination at the Si/SiO2 interface in electron irradiated (100) and (111) p‐channel metal‐oxide‐silicon field‐effect transistors and metal‐oxide‐silicon wafers. Electron spin resonance transitions on the Pb center increase the recombination current at the Si/SiO2 interface by 2–3 parts in 104. The results are interpreted using a model involving the recombination of electrons and holes at Pb centers with which they are spatially correlated.Keywords
This publication has 16 references indexed in Scilit:
- The optically detected magnetic resonance of dangling bonds at the Si/SiO2 interfaceSolid State Communications, 1986
- Paramagnetic trivalent silicon centers in gamma irradiated metal-oxide-silicon structuresApplied Physics Letters, 1984
- A study of thin silicon dioxide films using infrared absorption techniquesJournal of Applied Physics, 1982
- Interface states and electron spin resonance centers in thermally oxidized (111) and (100) silicon wafersJournal of Applied Physics, 1981
- Optical enhancement of the electron paramagnetic resonance signal from SiIII centers at the Si/SiO2 interfaceJournal of Applied Physics, 1981
- Spin dependent surface recombination in silicon p-n junctions: The effect of irradiationSolid State Communications, 1980
- Explanation of the large spin-dependent recombination effect in semiconductorsJournal de Physique Lettres, 1978
- Influence of the electron damping on the properties of intermediate valence systemsSolid State Communications, 1976
- Spin-Dependent Recombination on Silicon SurfacePhysical Review B, 1972
- Electron Spin Resonance in SiO2 Grown on SiliconJapanese Journal of Applied Physics, 1966