A phenomenological model for the macroscopic characteristics of irradiated silicon
- 1 September 1996
- journal article
- Published by Springer Nature in Il Nuovo Cimento A (1971-1996)
- Vol. 109 (9) , 1333-1341
- https://doi.org/10.1007/bf02773519
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Annealing effects on resistivity and hall coefficient of neutron irradiated siliconNuclear Physics B - Proceedings Supplements, 1995
- Radiation damage in silicon detectorsLa Rivista del Nuovo Cimento, 1994
- Modeling and simulation of neutron induced changes and temperature annealing of Neff and changes in resistivity in high resistivity silicon detectorsNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1994
- Fast neutron-induced changes in net impurity concentration of high-resistivity siliconIEEE Transactions on Nuclear Science, 1992
- Statistics of the Charge Distribution for a Localized Flaw in a SemiconductorPhysical Review B, 1957