Fast neutron-induced changes in net impurity concentration of high-resistivity silicon
- 1 December 1992
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 39 (6) , 1720-1729
- https://doi.org/10.1109/23.211359
Abstract
No abstract availableThis publication has 19 references indexed in Scilit:
- Comparison of 14 MeV neutron-induced and 1 MeV electron-induced radiation damage in crystalline siliconJournal of Physics D: Applied Physics, 1991
- Silicon detector developments for calorimetry: Technology and radiation damageNuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment, 1990
- Energy Dependence of Displacement Effects in SemiconductorsIEEE Transactions on Nuclear Science, 1972
- Carrier Removal Effects in Neutron-Irradiated Lithium-Doped SiliconIEEE Transactions on Nuclear Science, 1971
- Introduction Rates of Electrically Active Defects in n- and p-Type Silicon by Electron and Neutron IrradiationJournal of Applied Physics, 1968
- Design curves for predicting fast-neutron-induced resistivity changes in siliconProceedings of the IEEE, 1968
- Hall Effect Measurement of Radiation Damage and Annealing in SiJournal of the Physics Society Japan, 1964
- Nature of Bombardment Damage and Energy Levels in SemiconductorsJournal of Applied Physics, 1959
- Disordered Regions in Semiconductors Bombarded by Fast NeutronsJournal of Applied Physics, 1959
- Hall Effect and Conductivity in Porous MediaJournal of Applied Physics, 1956