Film thickness dependence of dislocation density reduction in GaAs-on-Si substrates
- 29 January 1990
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 56 (5) , 484-486
- https://doi.org/10.1063/1.102773
Abstract
Low dislocation density (4×105 cm−2) GaAs films on Si substrates have been obtained with a GaAs film thickness of 180 μm using vapor mixing epitaxy based on GaCl‐AsH3 (hydride) vapor phase epitaxy for the first time. Dislocation density decreases as the GaAs film thickness increases. Dislocation density is inversely proportional to film thickness in the film thickness region of 50 μm (and/or of dislocation density 7 cm−2), dislocation density is exponentially proportional to the film thickness. Assuming that this dependence results from a dislocation reaction during GaAs growth, it can be interpreted that the dislocation‐dislocation coalescence reaction mainly occurs with high dislocation density crystals, and additionally, a dislocation annihilation reaction, deflection, occurs with low dislocation density crystals.Keywords
This publication has 4 references indexed in Scilit:
- Defect reduction effects in GaAs on Si substrates by thermal annealingApplied Physics Letters, 1988
- Dislocation density reduction through annihilation in lattice-mismatched semiconductors grown by molecular-beam epitaxyJournal of Applied Physics, 1988
- New hydride vapor phase epitaxy for GaP growth on SiApplied Physics Letters, 1987
- Degradation of GaAs lasers grown by metalorganic chemical vapor deposition on Si substratesApplied Physics Letters, 1987