Electro-optic properties of reverse-biased GaAs epitaxial thin films at 10.6 μm
- 15 October 1973
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 23 (8) , 439-441
- https://doi.org/10.1063/1.1654950
Abstract
Measurements of the electro‐optic properties of high‐resistivity GaAs epitaxial thin films have been made at the 10.6‐μm CO2 laser wavelength by a novel rf interferometric technique. The described technique affords very accurate and convenient measurements of the phase shift of a 10.6‐μm guided wave mode in thin films as a function of reverse‐biased junction voltage. The measured electro‐optic coefficient for thin films is found to be in good agreement with conventional measurements, r41 = 1.2 × 10−10 cm/V at 10 μm, for bulk GaAs electro‐optic crystals.Keywords
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