Low-Temperature Growth of ZnSe by Photoassisted Molecular Beam Epitaxy
- 1 September 1990
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 29 (9A) , L1585
- https://doi.org/10.1143/jjap.29.l1585
Abstract
ZnSe epilayers have been successfully grown at a low temperature of 150°C for the first time by photoassisted molecular beam epitaxy. A He-Cd laser (441.6 nm) with an intensity of about 300 mW/cm2 was used as a light source. The free-exciton line in photoluminescence spectra at 11 K was sharp and strong, comparable with that of unirradiated epilayers grown at 340°C which is the optimum growth temperature without irradiation.Keywords
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