Contribution of recoil implantation to removal of monolayer impurity atoms on metal surfaces
- 1 July 1985
- journal article
- Published by Elsevier in Surface Science
- Vol. 157 (1) , L361-L366
- https://doi.org/10.1016/0039-6028(85)90629-6
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- A new technique of determining sputtering cross-section of impurity atoms on metal surfaces using self-sustaining segregationSurface Science, 1984
- Role of gram boundary diffusion on ion-ihduced composition change in alloys at elevated temperaturesJournal of Nuclear Materials, 1984
- Effect of segregation on preferred sputtering of alloysRadiation Effects, 1984
- Low energy (⩽ 100 eV) sputtering of thin molybdenum nitride filmsSurface Science, 1983
- Mass effect in the physical sputtering of multicomponent materialsJournal of Vacuum Science and Technology, 1982
- Recoil mixing in solids by energetic ion beamsNuclear Instruments and Methods, 1980
- The influence of adsorption energies on ion impact desorption of surface layersSurface Science, 1979
- Investigation of oxygen adsorption on Cu(110) by low-energy ion bombardmentSurface Science, 1979
- H+2 ion induced desorption of sulfur adsorbed on polycrystalline Ni surfacesSurface Science, 1978
- Sputtering of chemisorbed gas (nitrogen on tungsten) by low-energy ionsJournal of Applied Physics, 1974