Origin of laser-assisted and doping-assisted phenomena in semiconductors
- 1 January 1988
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 3 (1) , 54-59
- https://doi.org/10.1088/0268-1242/3/1/009
Abstract
Transfer of energy from a laser beam to a semiconductor takes place via excitation of the electronic system. Criteria for the occurrence of electronic effects are discussed. A model of localised electronic excitation is presented and compared with experimental data obtained on doped and laser irradiated semiconductors.Keywords
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