Epitaxial Growth Mechanism of the (100) As Surface of GaAs–The Effect of Positive Holes–
- 1 June 1988
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 27 (6A) , L960-963
- https://doi.org/10.1143/jjap.27.l960
Abstract
The mechanism of the monoatomic layer epitaxy (ALE) on the (100) As surface of GaAs crystals was elucidated in terms of the elementary reactions which control the epitaxial growth. A positive hole plays an important role in ALE. The potential energy hypersurface and the chemical structure changes following the progress of the elementary reaction with a positive hole were described.Keywords
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