Growth of GaAs by switched laser metalorganic vapor phase epitaxy
- 30 June 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 48 (26) , 1787-1789
- https://doi.org/10.1063/1.96787
Abstract
Crystal growth of GaAs by switched laser metalorganic vapor phase epitaxy (SL MOVPE) is reported. This growth technique is achieved by combining laser MOVPE and atomic layer epitaxy. The growth process in SL MOVPE can be explained by a model which assumes that trimethylgallium adsorbed on the crystal surface is decomposed in a photocatalytic reaction and that the decomposition rate depends on the surface species present on the substrate.Keywords
This publication has 3 references indexed in Scilit:
- Laser enhanced metalorganic chemical vapor deposition crystal growth in GaAsApplied Physics Letters, 1985
- Atomic layer epitaxy of III-V binary compoundsApplied Physics Letters, 1985
- Morphology of GaAs and AlxGa1−xAs grown by molecular beam epitaxyJournal of Vacuum Science & Technology B, 1985