Charged dislocation induced optical absorption in GaAs
- 1 February 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (3) , 1261-1264
- https://doi.org/10.1063/1.343020
Abstract
We propose a model of optical absorption induced by electric fields resulting from charged dislocations. It is shown to account satisfactorily for the deformation induced absorption in GaAs, which exhibits the shift of the band‐to‐band transitions often observed in semiconductors. This model considers that dislocations introduce energy levels in GaAs and its implications should be rather general for most semiconductors in which dislocations introduce energy levels in the band gap.This publication has 15 references indexed in Scilit:
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