Antisite defects in plastically-deformed GaAs: An alternative analysis
- 1 December 1986
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 60 (11) , 867-870
- https://doi.org/10.1016/0038-1098(86)90824-0
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
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- The observation of high concentrations of arsenic anti-site defects in electron irradiated n-type GaAs by X-band EPRSolid State Communications, 1981
- Photocapacitance quenching effect for “oxygen” in GaAsSolid State Communications, 1978