Ballistic avalanche photodiodes: Ultralow noise avalanche diodes with nearly equal ionization probabilities
- 1 September 1986
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 49 (9) , 516-518
- https://doi.org/10.1063/1.97106
Abstract
Avalanche photodiode structures are proposed which theoretically exhibit very low excess noise. In these designs, the hole and electron ionization probabilities are made very close to unity for a single pass of the multiplication region. This is accomplished by ballistic injection across the gain region. The structures are less complex than other proposed low noise avalanche photodiode structures.Keywords
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