Energy deposition functions in electron resist films on substrates

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Abstract
A Monte Carlo simulation of electron scattering in the resist and substrate of a target in electron lithography was used to obtain the spatial distribution of energy deposition in the resist. Analytical approximations were subsequently obtained by a least‐squares fit of Gaussian functions to the forward‐ and backward‐scattered components of these distributions. The parameters in the analytical functions were deduced and a compendium of values are tabulated for a variety of resist thicknesses, incident electron energies, and substrates. The parameters were found to agree with other parameters that can be physically correlated with electron‐scattering processes and with available experimental data. These approximations and parameters provide quantitative guidelines for understanding and compensating of electron‐scattering and proximity effects in electron‐beam lithography.

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