General Explanation of Bias-Anneal Effects in a-Si:H
- 1 January 1988
- journal article
- Published by Springer Nature in MRS Proceedings
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
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- Thermal creation of metastable defects in a-Si:HJournal of Non-Crystalline Solids, 1987
- Bias annealing of doped amorphous siliconPhilosophical Magazine Part B, 1986
- Reverse bias and heat treatment to improve performance of a-Si solar cellsApplied Physics Letters, 1984
- Observation of a Reversible Field-Induced Doping Effect in Hydrogenated Amorphous SiliconPhysical Review Letters, 1982
- Reversible conductivity changes in discharge-produced amorphous SiApplied Physics Letters, 1977