Bias annealing of doped amorphous silicon
- 1 July 1986
- journal article
- Published by Taylor & Francis in Philosophical Magazine Part B
- Vol. 54 (1) , L21-L26
- https://doi.org/10.1080/13642818608243173
Abstract
Experiments are described which explore the changes in the densities of electrons or holes in doped amorphous silicon when it is annealed with an applied bias. Such bias annealing produces a metastable enhancement of the doping efficiency by altering the distribution of localized states. A model is proposed in which the effects are directly related to the doping mechanism of amorphous silicon.Keywords
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