Silicon wafer bonding studied by infrared absorption spectroscopy
- 14 November 1994
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 65 (20) , 2548-2550
- https://doi.org/10.1063/1.112631
Abstract
No abstract availableKeywords
This publication has 12 references indexed in Scilit:
- Hydrophobic silicon wafer bondingApplied Physics Letters, 1994
- Silicon Wafer Direct Bonding without Hydrophilic Native OxidesJapanese Journal of Applied Physics, 1994
- Spontaneous bonding of hydrophobic silicon surfacesApplied Physics Letters, 1993
- Void-free silicon-wafer-bond strengthening in the 200–400 °C rangeSensors and Actuators A: Physical, 1993
- Detection of Si—H bonds in silicon oxide by x-ray photoelectron spectrum differenceApplied Physics Letters, 1992
- Relationship between interfacial native oxide thickness and bonding temperature in directly bonded silicon wafer pairsJournal of Applied Physics, 1992
- Silicon‐On‐Insulator by Wafer Bonding: A ReviewJournal of the Electrochemical Society, 1991
- A Model for the Silicon Wafer Bonding ProcessJapanese Journal of Applied Physics, 1989
- Infrared spectroscopy of Si(111) and Si(100) surfaces after HF treatment: Hydrogen termination and surface morphologyJournal of Vacuum Science & Technology A, 1989
- Evidence of dissociation of water on the Si(100)2 × 1 surfacePhysical Review B, 1984