Molecular beam epitaxial GaAs/Al/sub 0.2/Ga/sub 0.8/As p-channel field-effect transistors on
- 1 July 1991
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 12 (7) , 385-386
- https://doi.org/10.1109/55.103615
Abstract
P-channel and n-channel heterostructure field effect transistors (HFETs) have been simultaneously fabricated by one-step molecular beam epitaxial growth of Si-doped Al/sub 0.2/Ga/sub 0.8/As/GaAs heterostructures on patternedKeywords
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