Lateral p-n junction formation in GaAs molecular beam epitaxy by crystal plane dependent doping

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Abstract
Lateral p‐n junctions have been formed during the growth of GaAs by molecular beam epitaxy. Using a GaAs substrate which consisted of side‐by‐side {100} and {111} A planes formed by plane‐selective etching, Si‐doped GaAs was found to grow with p‐type conductivity on the {111} A planes, while n‐type material was grown simultaneously on the {100} planes. n‐p‐n structures with p‐type regions as narrow as 2 μm were grown. Conductivity measurements on narrow stripes of p‐type material formed by GaAs growth on {111} A planes indicate that Si was efficiently incorporated as an acceptor under the growth conditions used for this experiment.