LT-GaAs with high breakdown strength at low temperature for power MISFET applications
- 1 July 1995
- journal article
- research article
- Published by Springer Nature in Journal of Electronic Materials
- Vol. 24 (7) , 913-916
- https://doi.org/10.1007/bf02653341
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Thermal annealing effect on low temperature molecular beam epitaxy grown GaAs: Arsenic precipitation and the change of resistivityApplied Physics Letters, 1994
- Applications of GaAs grown at a low temperature by molecular beam epitaxyMaterials Science and Engineering: B, 1993
- High I–V product LT-GaAs MISFET structureElectronics Letters, 1993
- Electromodulation study of GaAs with excess arsenicJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1992
- Ohmic contact formation on GaAs layers with low-temperature molecular-beam epitaxial capsIEEE Transactions on Electron Devices, 1992
- Microstructure of annealed low-temperature-grown GaAs layersApplied Physics A, 1991
- Substrate temperature dependence of arsenic precipitate formation in AlGaAs and GaAsJournal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures, 1991
- Device Applications of Low-Temperature-Grown GaAsMRS Proceedings, 1991
- Arsenic precipitates and the semi-insulating properties of GaAs buffer layers grown by low-temperature molecular beam epitaxyApplied Physics Letters, 1990
- Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like bandPhysical Review B, 1990