Ohmic contact formation on GaAs layers with low-temperature molecular-beam epitaxial caps

This publication has 8 references indexed in Scilit:

• Unpinning of GaAs surface Fermi level by 200 °C molecular beam epitaxial layer
  Applied Physics Letters, 1990
• Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE
  IEEE Electron Device Letters, 1990
• Potential impact of emerging semiconductor technologies on advanced power electronic systems
  IEEE Electron Device Letters, 1990
• Nonalloyed ohmic contacts on low-temperature molecular beam epitaxial GaAs: Influence of deep donor band
  Applied Physics Letters, 1990
• Anomalous Hall-effect results in low-temperature molecular-beam-epitaxial GaAs: Hopping in a denseEL2-like band
  Physical Review B, 1990
• Low-frequency dispersion of transconductance in GaAs JFETs and MESFETs with an ion-implanted channel layer
  IEEE Transactions on Electron Devices, 1990
• Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomalies
  IEEE Transactions on Electron Devices, 1988
• New MBE buffer used to eliminate backgating in GaAs MESFETs
  IEEE Electron Device Letters, 1988