Low-frequency dispersion of transconductance in GaAs JFETs and MESFETs with an ion-implanted channel layer
- 1 January 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (8) , 1789-1795
- https://doi.org/10.1109/16.57127
Abstract
No abstract availableKeywords
This publication has 10 references indexed in Scilit:
- Characterizing traps in MESFETs using internal transconductance (gm) frequency dispersionSolid-State Electronics, 1988
- Low-field low-frequency dispersion of transconductance in GaAs MESFETs with implications for other rate-dependent anomaliesIEEE Transactions on Electron Devices, 1988
- Buried-channel GaAs MESFET's with frequency-independent output conductanceIEEE Electron Device Letters, 1987
- Analysis of capacitance and transconductance frequency dispersions in MESFETs for surface characterizationSolid-State Electronics, 1986
- Surface influence on the conductance DLTS spectra of GaAs MESFET'sIEEE Transactions on Electron Devices, 1986
- Frequency dispersion of sidegating transconductance of GaAs junction field-effect transistorsApplied Physics Letters, 1985
- Status of the surface and bulk parasitic effects limiting the performances of GaAs IC'sPhysica B+C, 1985
- Electrical modeling of compound semiconductor interface for FET device assessmentIEEE Transactions on Electron Devices, 1980
- Surface states in an n-GaAs/plasma grown native oxide — A modified deep level transient spectroscopy measurementSurface Science, 1979
- Electron mobility and free-carrier absorption in GaAs: Determination of the compensation ratioJournal of Applied Physics, 1979