Surface states in an n-GaAs/plasma grown native oxide — A modified deep level transient spectroscopy measurement
- 2 July 1979
- journal article
- Published by Elsevier in Surface Science
- Vol. 86, 826-834
- https://doi.org/10.1016/0039-6028(79)90464-3
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Low-temperature plasma oxidation of GaAsApplied Physics Letters, 1978
- Deep-level transient spectroscopy: A new method to characterize traps in semiconductorsJournal of Applied Physics, 1974
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Surface states at steam-grown silicon-silicon dioxide interfacesIEEE Transactions on Electron Devices, 1966