Surface influence on the conductance DLTS spectra of GaAs MESFET's
- 1 October 1986
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 33 (10) , 1447-1453
- https://doi.org/10.1109/t-ed.1986.22693
Abstract
The observation of hole traps in small-signal GaAs MESFET's has been extensively reported in the literature. Previously these have been attributed to trapping at the active layer-substrate interface. Evidence is presented here, based on conductance DLTS and low-field low-frequency transconductance dispersion measurements on MESFET's of various geometries, to suggest that the main contribution to the "hole trap-like" spectrum in conductance DLTS is not bulk hole traps. Instead we believe that this phenomenon arises from changes in the population of surface states in the ungated access regions of the device, resulting in modulation of the surface depletion layer in series with the gate depletion region.Keywords
This publication has 14 references indexed in Scilit:
- Capacitance and conductance deep level transient spectroscopy in field-effect transistorsApplied Physics Letters, 1986
- The roles of the surface and bulk of the semi-insulating substrate in low-frequency anomalies of GaAs integrated circuitsIEEE Transactions on Electron Devices, 1985
- Characterization of electron traps in ion-implanted GaAs MESFET's on undoped and Cr-doped LEC semi-insulating substratesIEEE Transactions on Electron Devices, 1983
- The effects of deep levels in GaAs MESFETsPhysica B+C, 1983
- Backgating in GaAs MESFET'sIEEE Transactions on Electron Devices, 1982
- Influence of the surface and the episubstrate interface on the drain current drift of GaAs MESFET'sIEEE Transactions on Electron Devices, 1981
- Stability of performance and interfacial problems in GaAs MESFET'sIEEE Transactions on Electron Devices, 1980
- Dark Capacitance, Photocapacitance, Dark Conductance and Photoconductance Transients on GaAs MesfetsPublished by Springer Nature ,1980
- Trap localisation in the active layer of GaAs microwave f.e.t.sElectronics Letters, 1979
- Electrical traps in GaAs microwave f.e.t.sElectronics Letters, 1976