Potential impact of emerging semiconductor technologies on advanced power electronic systems
- 1 November 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 11 (11) , 520-522
- https://doi.org/10.1109/55.63019
Abstract
It is shown that a simple expression for k/sub D/=R/sub on/*C/sub in/ of a power semiconductor device can be used to evaluate the optimum performance feasible from a given material technology. A high-density, high-frequency microelectronic power supply based on synchronous rectifier switching topology is used to illustrate the potential impact of emerging semiconductor technologies on advanced power electronic systems. It is shown that optimum power devices based on wide-energy-bandgap semiconductors such as silicon carbide and diamond provide the basis for power conversion at very high frequencies.<>Keywords
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