Reduction in the rate of increase of spontaneous emission from double-heterostructure injection lasers at threshold
- 1 August 1972
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 21 (3) , 101-102
- https://doi.org/10.1063/1.1654287
Abstract
An abrupt reduction in the rate of growth of the spontaneous emission has been observed to occur at the lasing threshold of stripe‐geometry double‐heterostructure injection lasers. The observations are contrary to a previously published result of Sommers and imply that increases in the quasi‐Fermi level separation with current are significantly reduced at the lasing threshold in agreement with present theoretical predictions.Keywords
This publication has 8 references indexed in Scilit:
- Experimental tests of proposed mechanisms for gradual degradation of GaAs double-heterostructure injection lasersIEEE Journal of Quantum Electronics, 1972
- The Current Dependence of the Intensity of Spontaneous Emission of GaAs Injection Lasers to Full Operating PowerApplied Physics Letters, 1971
- JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATUREApplied Physics Letters, 1970
- GaAs–GaxAl1−xAs Heterostructure Injection Lasers which Exhibit Low Thresholds at Room TemperatureJournal of Applied Physics, 1970
- Quantum-Mechanical Rate Equations for Semiconductor LasersPhysical Review B, 1969
- Spectral Output of Semiconductor LasersJournal of Applied Physics, 1964
- Spontaneous and Stimulated Recombination Radiation in SemiconductorsPhysical Review B, 1964
- Spectral Characteristics of GaAs Lasers Operating in ``Fabry-Perot'' ModesJournal of Applied Physics, 1963