Confirmation of Tunneling Current via Traps by DLTS Measurements in InGaAs Photodiodes
- 1 June 1983
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 22 (6A) , L364
- https://doi.org/10.1143/jjap.22.l364
Abstract
A detailed analysis of the reverse characteristics of In0.53Ga0.47As pin-photodiodes at various temperatures reveals, besides generation, diffusion and band-to-band tunneling of carriers, an additional contribution to the dark current due to tunneling through an energy barrier of 0.16±0.02 eV. In deep-level transient spectroscopy measurements a thermal activation energy of 0.57±0.01 eV, equal to the gap energy minus the tunneling barrier, has been found. From these two measurements it can be concluded that thermal activation of deep traps and subsequent tunneling of carriers into band states leads to the additional dark current component.Keywords
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