Absorption of infrared radiation by neutral donor-pair molecules in III-V and II-VI compounds

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Abstract
A new mechanism of absorption of infrared radiation by neutral donor-pair molecules in n-type III-V and II-VI semiconductors at helium temperatures is investigated at photon energies of about half the donor ionization energy. A simple formula for the absorption coefficient is derived and numerical results are presented. The absorption line position agrees very well with the position of photoconductivity peaks observed in these materials by the Clarendon Laboratory group.