Effects of N-H2doses in ion-implanted bubble memory test chips
- 1 November 1982
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Magnetics
- Vol. 18 (6) , 1358-1360
- https://doi.org/10.1109/tmag.1982.1062015
Abstract
No abstract availableKeywords
This publication has 14 references indexed in Scilit:
- Determination of magnetic profiles in implanted garnets using ferromagnetic resonanceIEEE Transactions on Magnetics, 1981
- Characterization of Plasma‐Deposited Silicon DioxideJournal of the Electrochemical Society, 1981
- Effects of dosage and annealing on the magnetic behavior of ion-implanted garnet filmsJournal of Applied Physics, 1981
- Ion-implanted bubble circuit function designIEEE Transactions on Magnetics, 1981
- Design of Bubble Device Elements Employing Ion-Implanted Propagation PatternsBell System Technical Journal, 1980
- Measurement of magnetostriction coefficients of epitaxial garnet filmsReview of Scientific Instruments, 1979
- Crystal symmetry effects in ion-implanted propagation patterns for magnetic bubbles: "Roof-top" designsIEEE Transactions on Magnetics, 1979
- Reliable propagation of magnetic bubbles with 8 μm period ion implanted propagation patternsJournal of Applied Physics, 1979
- Thermally Induced Strains in Evaporated FilmsJournal of Applied Physics, 1965
- Elastic Constants of Single-Crystal YIGJournal of Applied Physics, 1961