Kinetic processes in electron beam-excited XeF (C40aA) laser media
- 1 April 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Journal of Quantum Electronics
- Vol. 25 (4) , 791-802
- https://doi.org/10.1109/3.17344
Abstract
Fundamental processes affecting the operation and performance of electron beam-excited XeF(C to A) laser media have been analyzed and modeled. Emphasis has been placed on conditions typical of high current density ( approximately 250A cm/sup -2/), short pulse ( approximately 10 ns FWHM) e-beam excitation of high pressure ( approximately 6 atm) multicomponent mixtures comprised of Ar-Kr-Xe-NF/sub 3/-F/sub 2/. Computation of the temporal evolution of excited and ionized species for such circumstances has permitted identification of the factors controlling XeF(C) formation and loss, and has resulted in the identification of the primary transient species that absorb radiation in the blue-green spectral region. The data so obtained serve to explain measured XeF(C to A) properties, particularly net gain, under conditions for which the C to A laser energy density and efficiency values are comparable to those of the UV XeF(B to X) laser.Keywords
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