Electron Spin Coherence Times in Bulk and Quantum Well Zincblende Semiconductors

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  • 27 April 2000
Abstract
A theory for longitudinal (T1) and transverse (T2) electron spin coherence times in zincblende semiconductor quantum wells is developed based on a non-perturbative nanostructure model solved in a fourteen-band restricted basis set. Quantitative agreement between these calculations and measurements is found for GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.

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