Electron Spin Decoherence in Bulk and Quantum Well Zincblende Semiconductors

Preprint

4 December 2000

preprint
Published by arXiv in arXiv

https://doi.org/10.48550/arXiv.cond-mat/0004461

Abstract

A theory for longitudinal (T1) and transverse (T2) electron spin coherence times in zincblende semiconductor quantum wells is developed based on a non-perturbative nanostructure model solved in a fourteen-band restricted basis set. Distinctly different dependences of coherence times on mobility, quantization energy, and temperature are found from previous calculations. Quantitative agreement between our calculations and measurements is found for GaAs/AlGaAs, InGaAs/InP, and GaSb/AlSb quantum wells.

Keywords

ZINCBLENDE SEMICONDUCTORS
SPIN DECOHERENCE
WELL ZINCBLENDE
QUANTUM WELLS
ELECTRON SPIN
QUANTIZATION
MOBILITY

All Related Versions

Version 1, 2000-04-27, ArXiv
Version 2, 2000-12-04, ArXiv
Published version: Physical Review B, 64 (16), 161301.

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