Influence Of Electrode Geometry On The High-field Characteristics Of Photoconductive Silicon Wafers

24 August 2005

conference paper
Published by Institute of Electrical and Electronics Engineers (IEEE)

p. 128-131
https://doi.org/10.1109/modsym.1994.597060

Abstract

First Page of the Article Author(s) Madangarli, V.P. Department of Electrical and Computer Engineering, University of South Carolina Gradinaru, G. ; Korony, G. ; Sudarshan, T.S. ; Loubriel, G.M. ; Zutavern, F.J. ; Patterson, P.E.

Keywords

PHYSICAL PROPERTIES
ELECTRODES
ELECTRICAL RESISTANCE
BREAKDOWN
ELECTRIC FIELD
PHOTOCONDUCTIVITY
SILICON WAFER
PARALLEL SYSTEMS
BREAKDOWN VOLTAGE
SYSTEM TESTING
ENGINEERING
MATERIALS SCIENCE
LOCAL FIELD
SILICON
GEOMETRY

This publication has 2 references indexed in Scilit:

High Field Limitations Of Photoconductive Silicon
Published by Institute of Electrical and Electronics Engineers (IEEE) ,2005
The influence of the semiconductor and dielectric properties on surface flashover in silicon-dielectric systems
IEEE Transactions on Electron Devices, 1994