High Field Limitations Of Photoconductive Silicon
- 24 August 2005
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Influence Of Electrode Geometry On The High-field Characteristics Of Photoconductive Silicon WafersPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Bulk breakdown of high field silicon-dielectric systemsIEEE Transactions on Electron Devices, 1995
- Breakdown damages of photoconductive silicon at high fieldsPublished by SPIE-Intl Soc Optical Eng ,1995
- The influence of the semiconductor and dielectric properties on surface flashover in silicon-dielectric systemsIEEE Transactions on Electron Devices, 1994
- Surface flashover sensitivity of silicon in vacuumPublished by SPIE-Intl Soc Optical Eng ,1994
- Prebreakdown and breakdown phenomena in high-field semiconductor-dielectric systemsJournal of Applied Physics, 1993
- On the negative differential resistance effect in high-field semiconductor-dielectric systemsApplied Physics Letters, 1992
- Surface breakdown of siliconJournal of Applied Physics, 1991
- New findings of pulsed surface breakdown along silicon in vacuumIEEE Transactions on Electron Devices, 1990
- Surface flashover of siliconIEEE Transactions on Electron Devices, 1990