New findings of pulsed surface breakdown along silicon in vacuum
- 1 December 1990
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 37 (12) , 2466-2471
- https://doi.org/10.1109/16.64519
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Recent developments in the investigation of surface flashover on silicon photoconductive power switchesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Initiation mechanism of pulsed surface flashover along silicon in vacuum by pre-breakdown conduction and photon emissionPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A mechanism for surface flashover of semiconductorsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- Contact effects on silicon surface flashover studiesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2005
- A new very high voltage semiconductor switchPublished by Institute of Electrical and Electronics Engineers (IEEE) ,1985
- Electroluminescence in anthracene crystals caused by field-induced minority carriers at moderate temperaturesThe Journal of Chemical Physics, 1973
- Transient Behaviour of Space‐Charge‐Limited Currents in p‐Type SiliconPhysica Status Solidi (b), 1967
- Avalanche Effects in Silicon p—n Junctions. I. Localized Photomultiplication Studies on MicroplasmasJournal of Applied Physics, 1963
- Internal Field Emission in SiliconJunctionsPhysical Review B, 1957
- Space-Charge Limited Emission in SemiconductorsPhysical Review B, 1953