Design and experimental characteristics of strained In/sub 0.52/Al/sub 0.48/As/In/sub x/Ga/sub 1-x/As (x<0.53) HEMTs
- 1 January 1989
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 36 (10) , 2249-2259
- https://doi.org/10.1109/16.40907
Abstract
No abstract availableKeywords
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