AlGaAs/GaAs heterojunction bipolar transistors with heavily C-doped base layers grown by flow-rate modulation epitaxy
- 2 January 1989
- journal article
- conference paper
- Published by AIP Publishing in Applied Physics Letters
- Vol. 54 (1) , 39-41
- https://doi.org/10.1063/1.100827
Abstract
AlGaAs/GaAs heterojunction bipolar transistors are fabricated using carbon‐doped p‐type GaAs base regions grown for the first time by flow‐rate modulation epitaxy. Because of the much smaller diffusion coefficient of carbon atoms in GaAs than that of beryllium and other p‐type impurities, sharp impurity profiles are achieved. The heterojunction bipolar transistors exhibited high current gains up to 40 for a base layer width of 150 nm and base doping of 2.4×1019 cm−3 . The electron lifetime in heavily carbon‐doped GaAs layers is considerably long, indicating favorable quality of heavily carbon‐doped layers.Keywords
This publication has 7 references indexed in Scilit:
- Abrupt p-type doping profile of carbon atomic layer doped GaAs grown by flow-rate modulation epitaxyApplied Physics Letters, 1987
- Doping of GaAs in metalorganic MBE using gaseous sourcesJournal of Crystal Growth, 1987
- Generation-Recombination Current in the Emitter-Base Junction of AlGaAs/GaAs HBTsJapanese Journal of Applied Physics, 1986
- Efficient Si Planar Doping in GaAs by Flow-Rate Modulation EpitaxyJapanese Journal of Applied Physics, 1986
- Modulation Doped n-AlGaAs/GaAs Heterostructures Grown by Flow-rate Modulation EpitaxyJapanese Journal of Applied Physics, 1986
- Concentration-dependent absorption and spontaneous emission of heavily doped GaAsJournal of Applied Physics, 1976
- Theory of a Wide-Gap Emitter for TransistorsProceedings of the IRE, 1957