Traps in molecular-beam epitaxial In0.53(GaxAl1−x)0.47As/InP
- 1 March 1990
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 67 (5) , 2450-2453
- https://doi.org/10.1063/1.345492
Abstract
Deep‐level transient spectroscopy measurements have been made on molecular‐beam epitaxial In0.53(GaxAl1−x)0.47As lattice matched to InP. Several electron and hole traps, with activation energies ranging from 0.14 to 0.79 eV, have been identified and characterized. In particular, systems of electron traps (0.30≤ΔET≤0.79 eV) and hole traps (0.14≤ΔET≤0.31 eV) with monotonically changing activation energies have been identified in these alloys. We believe these traps are dominant in this alloy system.This publication has 8 references indexed in Scilit:
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