An X-ray mask using Ta and heteroepitaxially grown SiC
- 1 May 1989
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 9 (1-4) , 135-138
- https://doi.org/10.1016/0167-9317(89)90031-2
Abstract
No abstract availableKeywords
This publication has 7 references indexed in Scilit:
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- Low Distortion X-Ray Mask With W-Ti AbsorberPublished by SPIE-Intl Soc Optical Eng ,1988
- Heteroepitaxial β ‐ SiC on SiJournal of the Electrochemical Society, 1988
- Improved tungsten absorber technology for sub-half-micron x-ray lithographyMicroelectronic Engineering, 1987
- Non hydrogenated materials for x-ray masks (Si3N4 and SiC)Microelectronic Engineering, 1987
- Tungsten: An alternative to gold for x-ray masksJournal of Vacuum Science & Technology B, 1987
- Ion-implant compensation of tensile stress in Tungsten absorber for low distortion X-ray masksMicroelectronic Engineering, 1986