Modeling of dispersive microwave FET devices using a quasi‐static approach

1 May 1995

journal article
research article
Published by Wiley in International Journal of Microwave and Millimeter-Wave Computer-Aided Engineering

Vol. 5 (3) , 173-194
https://doi.org/10.1002/mmce.4570050306

Abstract

In the design of active microwave circuits nonlinear device models are of great importance to allow one to predict the reliability of circuit performance. This article reflects our experimental approach in nonlinear FET modeling. Consistent bias‐dependent model elements of the FET small‐signal equivalent circuit are obtained by a recently developed unique multibias extraction procedure which permits the reduction of the nonlinear analysis to the inner part of a FET device. A dispersive nonlinear FET model with current and charge sources being integral functions of the bias‐dependent small‐signal model parameters is proposed. A bias‐dependent difference transconductance and difference channel conductance are introduced as relevant dispersion parameters. The proposed nonlinear FET model is verified on the basis of our signal waveform measurement technique using combined frequency‐ and time‐domain signal detection.

Keywords

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