Cross-sectional atomic force microscopy of semiconductor nanostructures
- 15 October 1995
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 78 (8) , 4939-4942
- https://doi.org/10.1063/1.359783
Abstract
We performed imaging of semiconductor nanostructures (quantum wells and quantum wires) by atomic force microscopy of the cleaved edge of the samples under ambient conditions. Selective etching was used to enhance the composition contrast of the semiconductor heterostructure layers, and a procedure for retrieving the nanostructure dimensions from the scanned image is presented. The simple sample preparation and the relatively large (up to ∼100×100 μm2) imaged areas offer advantages over more conventional nanometer resolution techniques such as transmission electron microscopy.This publication has 9 references indexed in Scilit:
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