Monte Carlo high-field transport in degenerate GaAs
- 28 January 1976
- journal article
- Published by IOP Publishing in Journal of Physics C: Solid State Physics
- Vol. 9 (2) , 315-319
- https://doi.org/10.1088/0022-3719/9/2/017
Abstract
An extension of the traditional Monte Carlo transport calculation is presented which takes into account the Pauli exclusion principle. This method is applied here to the determination of the electron distribution function in degenerate GaAs at 77K: the results are in satisfactory agreement with available experimental data.Keywords
This publication has 7 references indexed in Scilit:
- Monte Carlo treatment of electron-electron collisionsSolid State Communications, 1975
- Die Bedeutung der Elektron–Elektron‐Wechselwirkung in HalbleiternPhysica Status Solidi (b), 1974
- Experimental determination of electron distribution functions in degenerate GaAs at high electric fieldsSolid State Communications, 1973
- Impact ionization in narrow gap semiconductorsPhysica Status Solidi (a), 1973
- Electron-electron in Monte Carlo transport calculationsSolid State Communications, 1972
- Monte Carlo determination of electron transport properties in gallium arsenideJournal of Physics and Chemistry of Solids, 1970
- Theory of Impurity Scattering in SemiconductorsPhysical Review B, 1950