Experimental determination of electron distribution functions in degenerate GaAs at high electric fields
- 4 September 1973
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 13 (6) , 715-718
- https://doi.org/10.1016/0038-1098(73)90466-3
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- Calculation of Fermi Energy and Bandtail Parameters in Heavily Doped and Degenerate n-Type GaAsJournal of Applied Physics, 1970
- RADIATIVE RECOMBINATION FROM FIELD-EXCITED HOT CARRIERS IN n-GaAsApplied Physics Letters, 1970
- Influence of Impurities on the Optical Absorption Edge of Gallium Arsenide from 297° to 4°KJournal of the Optical Society of America, 1968
- Determination of Hot Carrier Distribution Function from Anisotropic Infrared Absorption in-Type GermaniumPhysical Review Letters, 1963
- Anisotropy of the energy distribution function of hot holes in germaniumPhysics Letters, 1963
- Optical Absorption of Gallium Arsenide between 0.6 and 2.75 eVPhysical Review B, 1962