Recombination analysis in 10 μm Pb1−xSnxTe
- 16 December 1976
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 38 (2) , 497-503
- https://doi.org/10.1002/pssa.2210380209
Abstract
No abstract availableKeywords
This publication has 5 references indexed in Scilit:
- Application of the travelling solvent method to growing of Pb1−xSnx Te single crystalsPhysica Status Solidi (a), 1976
- Detectivity limits for diffused junction PbSnTe detectorsInfrared Physics, 1975
- Recombination mechanisms in 8–14-μ HgCdTeJournal of Applied Physics, 1973
- PHOTOCONDUCTIVITY IN SINGLE-CRYSTAL Pb1−xSnx TeApplied Physics Letters, 1968
- Lifetime of Carriers in Lead Sulfide CrystalsPhysical Review B, 1957