A simple technique for determining the interface-trap distribution of submicron metal-oxide-semiconductor transistors by the charge pumping method
- 1 February 1989
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 65 (3) , 1358-1360
- https://doi.org/10.1063/1.343034
Abstract
The charge pumping method has been modified to simplify the experimental procedure and data evaluation. The width of a pulse section at midgap voltage was varied to scan the interface-state distribution within the band gap. A straight-forward analysis yields simple evaluation of interface-state distribution. The results obtained from a conventional and a submicron lightly doped drain metal-oxide-semiconductor transistor are presented.This publication has 4 references indexed in Scilit:
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