A highly linear MESFET
- 9 December 2002
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- No. 0149645X,p. 725-728
- https://doi.org/10.1109/mwsym.1991.147106
Abstract
A highly linear GaAs MESFET has been developed. This device incorporates a spike profile in its active channel and was designed specifically for linearity. A third-order intercept (IP3) and a 1 dB compression power of 43 dBm and 19 dBm, respectively, have been measured on a 400 mu m device at 10 GHz. The difference between these two numbers, 24 dB, is the largest yet reported for a MESFET. This device also dissipates only 400 mW of DC power yielding a linearity figure-of-merit (IP3/P/sub DC/) of 50.<>Keywords
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