Breakdown walkout in planar p-n junctions
- 1 June 1978
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 21 (6) , 813-819
- https://doi.org/10.1016/0038-1101(78)90305-2
Abstract
No abstract availableKeywords
This publication has 9 references indexed in Scilit:
- Emitter avalanche currents in gated transistorsIEEE Transactions on Electron Devices, 1972
- Electrochemical Charging of Thermal SiO2 Films by Injected Electron CurrentsJournal of Applied Physics, 1971
- Photoinjection Studies of Charge Distributions in Oxides of MOS StructuresJournal of Applied Physics, 1971
- Photoinjection into SiO2: Electron Scattering in the Image Force Potential WellJournal of Applied Physics, 1971
- Avalanche Injection of Electrons into Insulating SiO2 Using MOS StructuresJournal of Applied Physics, 1970
- Water Contamination in Thermal Oxide on SiliconJournal of the Electrochemical Society, 1970
- Avalanche drift instability in planar passivated p-n junctionsIEEE Transactions on Electron Devices, 1968
- Effect of surface fields on the breakdown voltage of planar silicon p-n junctionsIEEE Transactions on Electron Devices, 1967
- Hot-Electron Emission From ShallowJunctions is SiliconPhysical Review B, 1963